650nm 1mW Laser Diode
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ADL-65052GM-001

ADL-65052GM-001

650nm 1mW Laser Diode

FEATURES

  1. 635nm 1mW 50°C high reliable operation
  2. Saving space and cost of laser module
  3. Voltage driven LD, easy to use
  4. Highly stable laser output power
  5. Strong reverse bias protection
  6. High ESD sustainability voltage
  7. High Speed short protection
  8. Power source reverse protection

APPLICATION

  1. Industry: laser level, illumination, meter, scanner, detector
  2. Consumer: point light, sweeper, game lighting
  3. Health: special wavelength light source

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Parameter Symbol Condition Rating Unit
Light output power Po - 1.0 mW
Case temperature Tc - -10~+50 °C
Storage temperature Ts - -40~+85 °C

Electrical and optical characteristics (Tc=25∘C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Peak wavelength λ 645 656 660 nm Po=1mW, Vcc=3V
Operation current Iop - 16 21 mA Po=1mW, Vcc=3V
Parallel divergence angle θ// 6 8 12 deg. Po=1mW, Vcc=3V
Perpendicular divergence angle θ 24 27 32 deg. Po=1mW, Vcc=3V
Parallel FFP deviation angle Δθ// -3.0 0 +3.0 deg. Po=1mW, Vcc=3V
Perpendicular FFP deviation angle Δθ⊥ -3.0 0 +3.0 deg. Po=1mW, Vcc=3V
Emission point accuracy ΔxΔyΔz -80 0 +80 um Po=1mW, Vcc=3V

*Effective heat sink is recommended on 6V case due to extra heat